Poly-Si Nanosheet FETs with Vertical C-Shaped Channel Using Pulse Laser Crystallization
Poly-Si nanosheet FETs (NSFETs) with vertical C-shaped channel are experimentally demonstrated using pulse layer crystallization. The vertical channel shows Si (110) plane and better crystallization is accomplished using exposed-drain integration strategy. The poly-Si NSFETs have SS of 67.5 mV/decade, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{I}_{\text{OFF}}$</tex> of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$4.6\ \text{pA} / \mu \mathrm{m}$</tex>, and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{\text{ON}} / I_{\text{OFF}}$</tex> of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$6.2\times 10^{6}$</tex>. The present process provides a new pathway for upper device fabrication in monolithic 3D (M3D) technology.
Authors
- Shujuan Mao (ORCID: https://orcid.org/0000-0002-3350-1659)
- Xianglie Sun (ORCID: https://orcid.org/0000-0002-2177-9637)
- Guilei Wang (ORCID: https://orcid.org/0000-0002-1311-8863)
- Yongkui Zhang (ORCID: https://orcid.org/0000-0003-0840-2963)
- Junfeng Li (ORCID: https://orcid.org/0000-0001-9921-4727)
- Chao Zhao (ORCID: https://orcid.org/0000-0003-1439-0188)
- Jun Luo (ORCID: https://orcid.org/0000-0002-5122-6806)
- Jinbiao Liu
- Huilong Zhu (ORCID: https://orcid.org/0000-0001-7429-2470)
- Zhuo Chen (ORCID: https://orcid.org/0000-0001-6453-0447)
Institutions
- Institute of Microelectronics (SG)
- University Memory and Aging Center (US)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097229
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00