Top-Down Nanowire microLED on Bulk GaN Substrates

The demands of modern display technologies including augmented and virtual reality applications require highly dense, bright and compact microLEDs. InGaN quantum well based LEDs face severe efficiency drop with respect to its size reduction. This can be attributed to the presence of quantum confined Stark effect (QCSE) and to the high dislocation densities, formed during the growth of lattice mismatched epilayers. In this work, we utilize top-down fabricated nanowire LEDs grown on single crystal GaN substrate, offering sustained external quantum efficiency.