Charge Pumping Electrically-Detected Magnetic Resonance in Si MOS Transistors-Identification of Interface Defects and Dopant Atoms-

Charge pumping, which measures the electron-hole recombination currents induced by a pulse gate voltage, is one of the most widely used methods for investigating the MOS interface defects. Here we show that the charge pumping combined with the electron spin resonance technique enables us to identify the origin of the interface defects (dangling bonds) of the Si MOS transistors. We also show that it clarifies the role of dopant atoms in the charge pumping recombination process.