BEOL-Compatible Microwave Annealing of HfO<sub>2</sub>/ZrO<sub>2</sub> Superlattice Super High-K: Stabilizing Morphotropic Phase Boundaries and Low Leakage Current
This study demonstrates stable morphotropic phase boundary characteristics in metal-ferroelectric-metal capacitors based on HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/ZrO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> superlattice through low-temperature microwave annealing (MWA) technology, achieving an exceptional dielectric constant <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\boldsymbol{\kappa=51})$</tex>. Moreover, compared to devices treated with rapid thermal annealing, those treated with MWA exhibit significantly lower leakage currents and higher breakdown strength. By reducing the thermal budget, this approach not only achieves outstanding electrical performance but also provides a highly promising solution for monolithic 3D integration applications.
Authors
- Fu-Ju Hou (ORCID: https://orcid.org/0000-0001-8288-2542)
- Yi-Ju Yao (ORCID: https://orcid.org/0009-0000-7197-5495)
- Chen-You Wei (ORCID: https://orcid.org/0009-0005-5563-9690)
- Yuhong Chen (ORCID: https://orcid.org/0000-0003-1597-1232)
- Guang-Li Luo
- Yung-Chun Wu
Institutions
- National Tsing Hua University (TW)
- Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097241
- Citations
- 1
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73