Evaluation of In-Memory Logic Computation for Ferroelectric Capacitive Memory
In this work, through careful device design and analysis for Ferroelectric Capacitive Memory (FCM) devices, the 1T1C FCM Write/Read operation and bitwise AND/NAND and OR/NOR logic computation are demonstrated and evaluated. Due to the non-destructive read characteristic, the 1T1C FCM is a promising candidate for future LiM to overcome the von Neumann bottleneck.
Authors
- Hsiao-Yun Chang (ORCID: https://orcid.org/0000-0002-8470-566X)
- Pin Su (ORCID: https://orcid.org/0000-0002-8213-4103)
- Po-Tsang Huang (ORCID: https://orcid.org/0000-0001-8679-2755)
Institutions
- Semiconductor Manufacturing International (Italy) (IT)
- Pioneer (United States) (US)
- National Yang Ming Chiao Tung University (TW)
- Hodges University (US)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097210
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00