Synaptic Emulated by Double-Layer ZnO Resistive RAM (ReRAM) via Optimized Sputter and Low-Temperature ALD Process
To realize a synaptic device supporting multi-mode modulation by optical and electrical signals, we systematically studied the optoelectronic properties of the ZnO ReRAM devices in single-layer Cu/ZnO(ALD)/ZnO(MS)/Si structure fabricated via magnetron sputtering (MS) and ALD. The single-layer devices exhibit artificial synaptic properties to both electrical and optical signals. This work demonstrates the photoelectric bio-synaptic properties of ZnO ReRAM prepared by optimized MS and low-temperature ALD process, which can support synaptic emulation in the field of photoelectric neural networks.
Authors
- Pengpeng Sang (ORCID: https://orcid.org/0000-0001-8071-3024)
- Yifan Wu (ORCID: https://orcid.org/0000-0002-2856-9835)
- Jiezhi Chen (ORCID: https://orcid.org/0000-0003-2996-1406)
- Junyao Mei
- Xuepeng Zhan (ORCID: https://orcid.org/0000-0002-1701-9301)
- Jixuan Wu (ORCID: https://orcid.org/0000-0002-3207-9724)
- Hongyang Zhang (ORCID: https://orcid.org/0000-0002-9119-9945)
- Ruidong Li
- Yi Hu (ORCID: https://orcid.org/0000-0003-1269-6327)
- Peng Guo (ORCID: https://orcid.org/0000-0001-5585-292X)
Institutions
- Shandong University (CN)
- Sinochem Group (China) (CN)
- Cloud Computing Center (CN)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097261
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Shandong Province
- Key Technology Research and Development Program of Shandong