Enhanced Four-Wave Mixing Using ITO at Epsilon-Near-Zero on Silicon Nitride Waveguides
We report the theoretical investigation of a composite waveguide formed by adding a layer of Indium Tin Oxide (ITO) on a silicon nitride waveguide. The waveguide supports the fundamental Ex (TE) and Ey (TM) modes, which interact differently with the ITO layer working in its epsilon-near-zero (ENZ) regime. Four-wave mixing is studied in the structure and the resulting signal/idler are monitored, motivating applications in squeezed-light generation for continuous-wave quantum light sources.
Authors
- Pierre Berini (ORCID: https://orcid.org/0000-0002-6795-7275)
- Arash Mokhtari (ORCID: https://orcid.org/0000-0002-4792-736X)
Institutions
- Shahid Bahonar University of Kerman (IR)
- University of Ottawa (CA)
Publication Details
- Published
- 2025-05-20
- DOI
- https://doi.org/10.1109/pn66844.2025.11097174
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00