Study of p-GaN Gate HEMT’s Structural and Geometrical Parameters to Realise E-mode HEMT for 750V Switch Operation
Current Natural Sciences & Engineering journal publishes the finest, cutting-edge, and application-oriented peer-reviewed research in the fields of physical sciences & engineering, green & hydrogen energy, metrology and standardization, chemical sciences, net zero carbon and environmental sciences, nuclear and health science, digital agriculture purely on the basis of scientific validity, novelty, and high ethical standards.
Authors
- Sonalee Kapoor
- Niraj Kumar (ORCID: https://orcid.org/0000-0001-7878-0762)
- D. S. Rawal (ORCID: https://orcid.org/0000-0003-4280-2805)
- Khuswant Sehra
Publication Details
- Journal
- Current Natural Sciences & Engineering.
- Published
- 2025-07-30
- DOI
- https://doi.org/10.63015/10se-2467.2.3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00