Engineering charge transfer doping of MoSe<sub>2</sub> monolayers <i>via</i> epitaxial orientation-dependent surface electron accumulation in high-<i>κ</i> dielectric Gd<sub>2</sub>O<sub>3</sub> thin films
An effective strategy for engineering doping concentration in TMDCs by utilizing epitaxial surface orientation of underlying dielectric layers promoted by oxygen vacancies on high- κ dielectric substrate surfaces.
Authors
- Avijit Dhara (ORCID: https://orcid.org/0000-0001-8126-4873)
- Ayan Roy Chaudhuri (ORCID: https://orcid.org/0000-0002-9108-3918)
- Ahin Roy (ORCID: https://orcid.org/0000-0002-9515-2562)
- Kritika Ghosh (ORCID: https://orcid.org/0000-0001-9514-7424)
- Sajal Dhara (ORCID: https://orcid.org/0000-0002-1549-4475)
- J. Osten
- A. Fissel (ORCID: https://orcid.org/0000-0002-0978-2382)
- Yukio Sato (ORCID: https://orcid.org/0000-0002-4537-0692)
Institutions
- Leibniz University Hannover (DE)
- Indian Institute of Technology Kharagpur (IN)
- Kumamoto Industrial Research Institute (JP)
- Kumamoto University (JP)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01580d
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00