Numerical analysis on the thermal stress and dislocation density of a 300 mm SiC single crystal grown by the PVT method
A numerical model for thermal stress and dislocation during the growth of a 300 mm SiC crystal has been developed, systematically illustrating the evolution of thermal stress, BPD density, and prismatic slip as the crystal size increases to 300 mm.
Authors
- Lingling Xuan (ORCID: https://orcid.org/0000-0002-8141-7988)
- Xiaodong Pi (ORCID: https://orcid.org/0000-0002-4233-6181)
- Sheng'ou Lu (ORCID: https://orcid.org/0009-0003-6469-833X)
- Anqi Wang (ORCID: https://orcid.org/0000-0003-3409-823X)
- Fan Wang (ORCID: https://orcid.org/0009-0009-8938-6053)
- Xuefeng Han (ORCID: https://orcid.org/0009-0009-3169-7967)
- Binjie Xu (ORCID: https://orcid.org/0000-0002-7551-3893)
- Deren Yang
- Chen pengyang
Institutions
- Zhejiang University (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ce00471c
- Citations
- 4
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 2.92