Doping of titanium oxide during annealing in ammonia plasma

Abstract This paper studies the doping of titanium oxide films in ammonia plasma. It is shown that gas discharge alone is not enough for doping. It is necessary to increase the substrate temperature to at least 550°C, which is associated with the diffusion of ammonia into the film during plasma processing. Increasing the gas discharge power increases the plasma temperature and increases the pyrolysis rate. The nitrogen concentration and the probability of doping increase near the substrate surface. The amount of nitrogen increases, which penetrates into titanium oxide.