3-Bit D Flip-Flop Using 8 State QDC-SWS Inverters

This work introduces an innovative flip-flop circuit utilizing multi-state quantum dot gate FETs, quantum dot gate and quantum dot channel FETs, and quantum dot channel (QDC) spatial wavefunction-switched (SWS) field-effect transistors (FETs). The SWS-FET features two or more vertically stacked quantum-well or quantum dot (QD) layers, where the gate voltage controls carrier localization within each channel. By leveraging spatial positioning to encode multiple logic states and facilitating carrier transport through mini-energy bands in a GeOx-Ge/SiOx-Si quantum dot superlattice (QDSL), the design achieves 8-state operation. Built upon the 8-state inverter using QDC SWS-FETs in a CMOS-X configuration, this approach introduces a novel paradigm for developing advanced registers and sequential circuits. The proposed design enhances performance by minimizing the silicon footprint.