Cadmium defect-induced modulation of hole self-trapping in monoclinic gallium oxide for optoelectronic applications
Cd doping in β-Ga 2 O 3 significantly reduces the hole self-trapping and induces an intravalence state due to the formation of Cd Ga and V Ga acceptors, which promote the p-type conductivity in this material and make it promising for optoelectronics.
Authors
- Tasfia Chowdhury
- M. Azizar Rahman (ORCID: https://orcid.org/0000-0002-5433-4124)
- Rabiur Rahaman
- Rahima Khatun
Institutions
- Bangladesh University of Engineering and Technology (BD)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02386f
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00