Spin Control of Highly Strained Silicon Vacancy Centers in Nanodiamonds

Silicon vacancy centers (SiV) in diamond have emerged as a promising quantum technologies platform. We use highly strained SiV to characterize and control its optical dipole, electron and closeby nuclear spins at liquid helium temperature.

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/quantum.2025.qw3a.22
Primary Topic
Diamond and Carbon-based Materials Research
Type
article
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article

Spin Control of Highly Strained Silicon Vacancy Centers in Nanodiamonds

Marco Klotz, Alexander Kubanek, Andreas Tangemann
Diamond and Carbon-based Materials Research
article

Spin Control of Highly Strained Silicon Vacancy Centers in Nanodiamonds

Marco Klotz, Alexander Kubanek, Andreas Tangemann
article en

Abstract

Silicon vacancy centers (SiV) in diamond have emerged as a promising quantum technologies platform. We use highly strained SiV to characterize and control its optical dipole, electron and closeby nuclear spins at liquid helium temperature.

Center for Integrated Quantum Science and Technology (DE)
Openalex Percentile: Top 87%
Diamond and Carbon-based Materials Research
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Spin Control of Highly Strained Silicon Vacancy Centers in Nanodiamonds — Marco Klotz, Alexander Kubanek, et al. · (2025) | TGRS Research Map | TGRS