Design and Analysis of Dual-Source Triple-Metal-Gate Six-Cavity Charge-Plasma-TFET Biosensor

On a single gate, an integrating mechanism is introduced that acts on the dual response of the third metal gate with enhanced sensitivity to biomolecules bearing neutral and charged groups having different dielectric values (K). In this case, a double vertical channel is employed to increase the ON current when in the ON state and increase sensitivity when charged and unbiased biomolecules are exposed at low gate voltage. In low gate voltage the third metal gate (between two vertical source) is fixed at +0.5V to help to modulate energy bands with presence of biomolecules and increase sensitivity and also the presence of six cavity, considering cavities at both tunnelling junction with additional two cavities parallel with source/channel vertical tunnelling junction helps to sense different kind of biomolecules with more sensitivity. With the aid of dual source vertical channel engineering and gate work functions, it improves the ON mode current, sensitivity, and OFF mode current of the proposed biosensor. A high-K gate dielectric constant is used in a similar manner to obtain the highest ON current. The output characteristics of the proposed biosensor were examined in relation to the presence of both charged and unbiased biologic molecules in the cavities. (drain current and ION-IOFF current ratio) especially considering sensitivity variations across the output properties. The sensitivity of drain current, 1.06 × 106, is achieved at a gate voltage of Vg 0.5V and a third gate voltage at +0.5V in the suggested six cavity configuration.