Influence of interface dielectric disorder on interlayer excitons in mixed binary/ternary TMD heterostructures
In this paper, we study the excitonic linewidths and peak energies in two transition metal dichalcogenide heterostructures of Mo<sub>0.5</sub>W<sub>0.5</sub>Se<sub>2</sub> and its binary counterparts, MoSe<sub>2</sub> and WSe<sub>2</sub>. We observe spectra composed of several individual excitonic transitions in temperature-dependent photoluminescence measurements. Among these are transitions of neutral excitons and trions from the binary layers and the interlayer excitons from the heterostructures. The luminescence linewidth of the interlayer excitons is significantly broader than the linewidths of the excitonic transitions from the binary layers. We attribute this additional line broadening to dielectric disorder caused by spatial inhomogeneity at the interface.
Authors
- H. Masenda (ORCID: https://orcid.org/0000-0003-4722-9622)
- Mohammed Adel Aly
- Martín Koch (ORCID: https://orcid.org/0000-0001-5584-7549)
- Emmanuel Oghenevo Enakerakpor
Institutions
- Ain Shams University (EG)
- Philipps University of Marburg (DE)
- University of the Witwatersrand (ZA)
Publication Details
- Journal
- Nanoscale Advances
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d4na00786g
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Alexander von Humboldt-Stiftung
- Deutscher Akademischer Austauschdienst
- Deutsche Forschungsgemeinschaft
- Ministry of Higher Education
- Deutscher Akademischer Austausch Dienst Kairo