Ka-Band Two-Stage Low-Noise Amplifier with Low-Q Inductor Technique Using 28-nm FD-SOI CMOS Process for Beamforming Systems

In this study, we designed a Ka-band low-noise amplifier with a 28-nm FD-SOI CMOS process. It was designed with a single-ended two-stage structure, and a low Q-factor inductor and RC feedback structure were applied to suppress the oscillation. In addition, a common-source structure was used to secure the noise figure. The inductive source degeneration technique was applied to the first stage for noise matching. Additionally, an inductor and a resistor connected in series to the drain node of the first stage were used to secure the noise figure and expand the bandwidth. In the second stage, an RC feedback structure was applied between the gate and drain to secure stability. As a final result, in the operating frequency range of 29.1 GHz to 30.8 GHz, the gain and noise figure were 12.0-12.3 dB and 3.14-3.39 dB, respectively. The core size of the designed low-noise amplifier was 0.074 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.