Field-Stop Static Induction Thyristor (FS-SITH): An Improved High-Voltage Device
The Static Induction Thyristor (SITH) is renowned for its unique channel barrier control mechanism. By incorporating an additional heavily doped N+ region above the anode, we introduce an enhanced version, the Field-Stop Static Induction Thyristor (FS-SITH). This innovation modifies the electric field distribution and significantly boosts the forward blocking voltage capacity while preserving the original control mechanism. Through TCAD simulations, we investigated the channel parameters, barrier control mechanisms, and current-voltage characteristics of both SITH and FS-SITH. Our findings reveal that FS-SITH can block a higher voltage of 1830 V at a reduced gate voltage of -8 V, demonstrating superior performance.
Authors
- Guo‐Yang Li (ORCID: https://orcid.org/0000-0002-5939-9293)
- Hairong Li (ORCID: https://orcid.org/0000-0003-3192-2158)
- Xiangqiang Zeng
- Yucheng Li (ORCID: https://orcid.org/0000-0003-4611-8314)
- Da Li (ORCID: https://orcid.org/0000-0003-3407-6858)
- Zhixiong Huang
Institutions
- Lanzhou University of Technology (CN)
Publication Details
- Published
- 2025-05-23
- DOI
- https://doi.org/10.1109/ecie65947.2025.11086662
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China