Surface Morphology of ZnGa2O4:Mn Thin Films Obtained by RF Ion-Plasma Sputtering on Quartz Substrates

Thin films of ZnGa 2 O 4 :Mn are obtained by means of the radio-frequency ion-plasma sputtering in an argon atmosphere on amorphous -SiO 2 substrates.The study of the surface morphology of ZnGa 2 O 4 :Mn thin films by means of atomic force microscopy shows that heat treatment in an air atmosphere increases the average grain diameter from 113 nm in an unannealed film to 274 nm in an annealed sample.Additionally, the root-meansquare (RMS) roughness of the thin-film surface is increased from 3.8 nm to 6.2 nm, respectively.The analyses of the distributions of crystallites in diameter and volume are carried out, and it is shown that the process of heat treatment of thin films leads to grain growth due to the processes of growth and sintering. - -SiO 2 ZnGa 2 O 4 :Mn. - , ZnGa 2 O 4 :Mn 113 274 3,8 6,2 . '; , .