Wide Bandgap GaN Devices for Electric Vehicles: Advancing Power Conversion and Efficiency

The evolution of electric vehicles (EVs) has intensified the need for highly efficient, compact, and thermally robust power electronics. Gallium Nitride (GaN), as a wide bandgap semiconductor, offers a promising alternative to traditional silicon devices by enabling high-speed switching, low conduction losses, and reduced thermal footprints. This paper presents a comprehensive analysis of GaN device fundamentals, EV-specific applications, implementation challenges, modeling methodologies, and the current commercial landscape. Future research trajectories including vertical GaN, monolithic integration, and advanced cooling strategies are also outlined to support the next generation of sustainable mobility platforms.