Ferroelectric Charged Domain-Wall Synapse for Neuromorphic Computing

Inspired by brain neural networks, integrated memory-computing devices are critical to meet the demands of big data and artificial intelligence. This work explores the quasi-continuous modulation of ferroelectric charged domain walls' conductance, which is confined in a topological quad-domain, allowing the charged domain walls to serve as neural synapses. The device mimics synaptic plasticity (long-term potentiation and depression) and shows paired impulse facilitation. In a designed ferroelectric domain-wall neural network, we demonstrate multiplicative, accumulation-additive operations between the input image and the stored response matrix, capable of image processing functions, including triclassification with 100% accuracy. In the neural network simulation, the MINST database and the Cifar-10 database achieve 98.7% and 95.1% recognition rates. The sub-nanosecond polarization switching and the ultrathin (3-5 nm) charged domain walls position them as a promising platform for advancing ultrafast and scalable synaptic devices for low-power (potentially reduced to 0.2 aJ with sub-nanosecond pulse durations) neuromorphic computing systems.

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Institutions

Publication Details

Journal
Nano Letters
Published
2025-07-24
DOI
https://doi.org/10.1021/acs.nanolett.5c02081
Citations
6
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
4.38

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article

Ferroelectric Charged Domain-Wall Synapse for Neuromorphic Computing

Ying Fu, Qinghua Liang, Ji Ma, Yuanyuan Fan et al.
6 citations
Nano Letters
Advanced Memory and Neural Computing
4.38
article

Ferroelectric Charged Domain-Wall Synapse for Neuromorphic Computing

Ying Fu, Qinghua Liang, Ji Ma, Yuanyuan Fan, Wael Ben Taazayet, Houbing Huang, Congli He, Jiafang Li, Xiaoming Shi, Ce‐Wen Nan, Liang Chen, Yu Wang, Yiming Liu, Jing Wang, Huayu Yang
article en
6 citations

Abstract

Inspired by brain neural networks, integrated memory-computing devices are critical to meet the demands of big data and artificial intelligence. This work explores the quasi-continuous modulation of ferroelectric charged domain walls' conductance, which is confined in a topological quad-domain, allowing the charged domain walls to serve as neural synapses. The device mimics synaptic plasticity (long-term potentiation and depression) and shows paired impulse facilitation. In a designed ferroelectric domain-wall neural network, we demonstrate multiplicative, accumulation-additive operations between the input image and the stored response matrix, capable of image processing functions, including triclassification with 100% accuracy. In the neural network simulation, the MINST database and the Cifar-10 database achieve 98.7% and 95.1% recognition rates. The sub-nanosecond polarization switching and the ultrathin (3-5 nm) charged domain walls position them as a promising platform for advancing ultrafast and scalable synaptic devices for low-power (potentially reduced to 0.2 aJ with sub-nanosecond pulse durations) neuromorphic computing systems.

Nano LettersVol. 25(31)
Kunming University of Science and Technology (CN), Beijing Institute of Technology (CN), Beijing Normal University (CN), Zhuhai People's Hospital (CN), Division of Materials Science and Engineering (AU), Time Domain (United States) (US), Multidisciplinary Software Systems Research (United States) (US), Zhuhai Institute of Advanced Technology (CN), PRG S&Tech (South Korea), State Key Laboratory of New Ceramics and Fine Processing, University of Science and Technology Beijing (CN), Tsinghua University (CN)
National Natural Science Foundation of China, Beijing Municipal Natural Science Foundation, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 5%
Advanced Memory and Neural Computing
4.38
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