Wafer-scale transfer-free patterned graphene transparent electrodes for GaN-based LEDs: a universal technique towards different substrates

Abstract With the continuous development of graphene in the field of electronic devices, it is necessary to further develop wafer-scale high-quality graphene preparation technique. A patterning preparation technique for 2-inch wafer-scale transfer-free graphene is reported in this paper, which is innovatively applicable to a variety of substrates. Based on this technique, a 2-inch wafer-scale light-emitting diode (LED) chip with graphene transparent electrodes was fabricated. The results show that the prepared graphene has high quality and uniformity, and plays a good role in improving electrode contact and current spreading. In addition, the LEDs exhibit excellent electrical and optical performance and have a good yield. This wafer-scale graphene preparation technique avoids the damage to graphene caused by the transfer process and the patterning process, which is scalable and suitable for real applications.