Rotational Influence on Wave Propagation in Semiconductor Nanostructure Thermoelastic Solid with Ramp-Type Heat Source and Two-Temperature Theory

This study investigates the influence of rotation on wave propagation in a semiconducting nanostructure thermoelastic solid subjected to a ramp-type heat source within a two-temperature model. The thermoelastic interactions are modeled using the two-temperature theory, which distinguishes between conductive and thermodynamic temperatures, providing a more accurate description of thermal and mechanical responses in semiconductor materials. The effects of rotation, ramp-type heating, and semiconductor properties on elastic wave propagation are analyzed theoretically. Governing equations are formulated and solved analytically, with numerical simulations illustrating the variations in thermal and elastic wave behavior. The key findings highlight the significant impact of rotation, nonlocal parameters e0a, and time derivative fractional order (FO) α on physical quantities, offering insights into the thermoelastic performance of semiconductor nanostructures under dynamic thermal loads. A comparison is made with the previous results to show the impact of the external parameters on the propagation phenomenon. The numerical results show that increasing the rotation rate Ω=5 causes a phase lag of approximately 22% in thermal and elastic wave peaks. When the thermoelectric coupling parameter ε3 is increased from −0.8×10−42 to 1.2×10−42. The temperature amplitude rises by 17%, while the carrier density peak increases by over 25%. For nonlocal parameter values ε=0.3→0.6, high-frequency stress oscillations are damped by more than 35%. The results contribute to the understanding of wave propagation in advanced semiconductor materials, with potential applications in microelectronics, optoelectronics, and nanoscale thermal management.