Review on Metal (-Oxide, -Nitride, -Oxy-Nitride) Thin Films: Fabrication Methods, Applications, and Future Characterization Methods

During the last few years, the requirements for highly efficient, sustainable, and versatile materials in modern biomedicine, aircraft and aerospace industries, automotive production, and electronic and electrical engineering applications have increased. This has led to the development of new and innovative methods for material modification and optimization. This can be achieved in many different ways, but one such approach is the application of surface thin films. They can be conductive (metallic), semi-conductive (metal-ceramic), or isolating (polymeric). Special emphasis is placed on applying semi-conductive thin films due to their unique properties, be it electrical, chemical, mechanical, or other. The particular thin films of interest are composite ones of the type of transition metal oxide (TMO) and transition metal nitride (TMN), due to their widespread configurations and applications. Regardless of the countless number of studies regarding the application of such films in the aforementioned industrial fields, some further possible investigations are necessary to find optimal solutions for modern problems in this topic. One such problem is the possibility of characterization of the applied thin films, not via textbook approaches, but through a simple, modern solution using their electrical properties. This can be achieved on the basis of measuring the films’ electrical impedance, since all different semi-conductive materials have different impedance values. However, this is a huge practical work that necessitates the collection of a large pool of data and needs to be based on well-established methods for both characterization and formation of the films. A thorough review on the topic of applying thin films using physical vapor deposition techniques (PVD) in the field of different modern applications, and the current results of such investigations are presented. Furthermore, current research regarding the possible methods for applying such films, and the specifics behind them, need to be summarized. Due to this, in the present work, the specifics of applying thin films using PVD methods and their expected structure and properties were evaluated. Special emphasis was paid to the electrical impedance spectroscopy (EIS) method, which is typically used for the investigation and characterization of electrical systems. This method has increased in popularity over the last few years, and its applicability in the characterization of electrical systems that include thin films formed using PVD methods was proven many times over. However, a still lingering question is the applicability of this method for backwards engineering of thin films. Currently, the EIS method is used in combination with traditional techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and others. There is, however, a potential to predict the structure and properties of thin films using purely a combination of EIS measurements and complex theoretical models. The current progress in the development of the EIS measurement method was described in the present work, and the trend is such that new theoretical models and new practical testing knowledge was obtained that help implement the method in the field of thin films characterization. Regardless of this progress, much more future work was found to be necessary, in particular, practical measurements (real data) of a large variety of films, in order to build the composition–structure–properties relationship.