Bilayer non-volatile RRAM with Mg_<i>x</i>Ni1−xO conversion layer

This study aimed to enhance the performance of Resistive Random Access Memory (RRAM) cells with a switching layer of MgNiO. We investigated the Mg x Ni[Formula: see text]O material and utilized it as the oxide layer in the RRAM structure. In the experiment, Ni was employed as the upper electrode, and the oxide layer was stacked in an attempt to improve the RRAM characteristics. The I–V characteristics were then analyzed to examine the switching behavior of the RRAM. After stacking Mg[Formula: see text]Ni[Formula: see text]O beneath Mg[Formula: see text]Ni[Formula: see text]O, a slight increase in the HRS/LRS order was observed, while the stability of the element showed significant improvement. The heterojunction memory exhibited the ability to switch between HRS/LRS states more than 2,500 times, as demonstrated in the I–V sweep. Moreover, no significant changes were observed in the I–V curve between the first and the 2,500th cycles.