Voltage fluctuation of CMOS NAND gate analysed with large deviations theory

Abstract We conduct a detailed investigation of voltage fluctuation in a CMOS NAND gate, as modelled by Yoshino and Tokura (J Phys Soc Jpn 92:124004, 2023). We analyse the behaviour of the system with large deviations theory in the macroscopic regime and derive the exact solution for deterministic steady states despite the system’s asymmetric structure. Furthermore, we compute the Gaussian fluctuations around these deterministic states and compare the results with the exact solution of the master equation, finding that, in some cases, the obtained distribution accurately captures the entire distribution.