Finite element simulation of in-situ laser-assisted turning of monocrystalline silicon under different cooling conditions

In-situ laser-assisted single-point diamond turning (In-LAT) is a novel method for machining brittle materials such as monocrystalline silicon. However, the interplay between laser-assisted heating and flood cooling remains unclear. This study explores In-LAT mechanisms using finite element (FE) simulations. An FE model integrating the Johnson-Cook (J-C) constitutive model and coupled Eulerian-Lagrangian (CEL) method was developed to simulate In-LAT with flood cooling. Improved model convergence overcomes the limitations of existing approaches in simulating such complex processes. Comparative analysis shows that flood cooling in LAT reduces cutting forces, residual stresses, equivalent plastic strain, and heat-affected zone (HAZ) compared to dry laser-assisted turning (LAT). This study bridges the gap in current research by integrating LAT with flood cooling in FE simulations. The findings hold significant implications for optimizing machining processes and improving the quality of single-crystal silicon machining. • A FE model integrating coolant cooling in laser-assisted turning was proposed. • CEL simulation overcomes fluid-structure interaction limitations in LAT models. • Flood cooling LAT prevents ablation, reduces cutting forces/stress/strain. • Reveals flood cooling LAT mechanism, which is vital for silicon process optimization.