Ga2O3 nanowire array photoelectric cooperative memristor

This research investigates the memristive properties of Ga₂O₃ nanowire arrays, focusing on their photoelectric cooperative behavior. Ga₂O₃, an ultra-wide-bandgap semiconductor, exhibits five crystalline structures, with α- and β-Ga₂O₃ being the most commonly used due to their stability and practical applications. The study explores the memristive characteristics of Ga₂O₃ nanowire devices, which can reversibly switch between high- and low-resistance states under electrical stimulation. The memristive mechanism is analyzed through I-V curves, revealing that the space-charge-limited current (SCLC) mechanism best describes the device behavior. The impact of photoelectric synergy on the memristive properties is also examined, showing that UV light exposure can significantly alter the resistance states and reduce the switching voltages. Additionally, the study demonstrates that adjusting the current limit can effectively control the resistance window, optimizing the device performance. The findings highlight Ga₂O₃ nanowire arrays as promising candidates for advanced memristive devices with potential applications in neuromorphic computing and UV sensing.