Study on the retention characteristics of HZO FeFETs

This paper investigates the retention characteristics of Hf_0.5Zr_0.5O₂(HZO) ferroelectric field-effect transistors (FeFETs). FeFETs exhibit prominent advantages such as fast read/write speeds, excellent retention characteristics, and low operational power consumption. However, there is limited research on their retention characteristics at high temperatures, which is a critical factor for enhancing their reliability in practical applications. By utilizing a vacuum probe device and a temperature control system, we altered the environmental temperature and conducted long-term testing on the retention characteristics of the transistors. We obtained the variation in retention characteristics of HZO FeFETs at 300K,365K and 395K, and extrapolated their memory window after 10 years. By characterizing the changes in gate leakage current with temperature, we identified the primary mechanism behind retention degradation. Our research contributes to further improving the retention characteristics of HZO FeFETs.