Performance investigation of C-shaped pocket dual-gate-metal stacked-oxide sandwiched drain TFET with ambipolarity and analog/RF analysis

Abstract This work proposes a C-shaped pocket dual-gate metal stacked-oxide sandwiched drain tunnel field effect transistor (CSP-DGM-SO-SD TFET). This structure suppresses ambipolar current generation and distributes the lateral electric field at the tunnelling junction between the channel and drain, there by reducing the lateral electric field at this junction. The DC and analog/RF characteristics of the proposed TFET are simulated and analyzed using Synopsys Sentaurus TCAD, with optimized sandwiched drain structure parameters. The results indicate that the sandwiched drain structure suppresses the ambipolar current significantly while maintaining the on-state current. The optimized CSP-DGM-SO-SD TFET exhibits excellent DC characteristics, including a low average subthreshold swing (SS avg ) of 32.8 mV/Decade, a high switching current ratio (I on /I off ) of 3.75 × 10 13 , a high on-state current (I on ) of 1.079 × 10 −4 A/ μ m and a low ambipolar current (I amb ) of 2.154 × 10 −17 A/ μ m. Additionally, the RF performance of the proposed TFET is enhanced, with a cut-off frequency ( f T ) of 22.85 GHz.