Optimizing analog performance: the advantage of vertical MBCFETs in linearity and footprint

Abstract This work compares the performance of vertical and horizontal Multi-Bridge Channel Field-Effect Transistors (MBCFETs) for analog applications. While horizontal MBCFETs exhibit slight performance advantages in parameters like transconductance and subthreshold swing, vertical structures are generally considered more advanced due to their significantly smaller footprint. This study investigates the trade-offs among performance, area, and efficiency by analyzing devices with identical effective widths and varying channel lengths (180 nm and 90nm). Both structures demonstrate improved performance compared to previously reported devices, with the horizontal MBCFET showing marginally better characteristics. However, linearity parameter analysis indicates that the vertical MBCFET configuration exhibits reduced harmonic and inter-modulation distortion compared to the horizontal design. This enhanced linearity, coupled with the vertical architecture’s better area density—an important factor in modern integrated circuits where device miniaturization is paramount—makes it a more suitable option for applications requiring high signal fidelity.