Modulation in the Performance of $\text{Ni}-\text{TiO}2$ Thin Film Based Semiconductor Devices

The miniaturization of gate oxide thickness along with the defect-free oxide/semiconductor interface has been a prime focus in producing thin film transistors. Titanium dioxide <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left(\text{TiO}_{2}\right)$</tex> has emerged as a promising high-k oxide in metal-oxide-semiconductor (MOS) devices, significantly contributing to the advancement of device scaling and continued miniaturization in the semiconductor industry. Despite its large band gap of 3.3 eV, it exhibits exceptional electrical properties. The crystal phase, particle size, and shape significantly affect the physical and chemical characteristics of TiO2. In this study, we embark on an exploration of TiO2 and Ni-doped TiO2 thin films, paving the way for the future of miniaturized devices. Effect of Ni doping was studied from XRD, Raman, I-V and C-V measurement results. The XRD of TiO2 thin films showed a prominent peak along (101) crystalline plane. The Raman result exhibits Raman active modes of TiO2. The interface trap density and oxide charge density were evaluated from the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{C}-\mathrm{V}$</tex> measurements. This work aims to fabricate high quality Ni doped TiO2 thin film which possess a potential application in boosting up the performance of futuristic miniaturized MOS devices.