A CMOS-Enabled Heterogeneously-Integrated InP HEMT W-band LNA with 2.8-dB Noise Figure at 7.7-dB Gain and 4.5 mW P<sub>DC</sub>
We report the integration of an Indium Phosphide (InP) high-electron mobility transistor (HEMT) into an RF CMOS wafer for a W-band ($60-90 \mathrm{GHz}$) low-noise amplifier (LNA). One- and two-stage differential LNAs include CMOS circuits that support RF power detection and temperature sensing. Prototype LNAs are implemented on both a silicon interposer and a $\mathbf{1 3 0 - n m}$ RF CMOS process for performance comparison. The 1 -stage LNA demonstrates a maximum gain of 12.6 dB and the wideband 2-stage LNA has a peak gain of 15.1 dB. The minimum noise figure of the heterogeneous InP-CMOS LNA is 2.8 dB at $7.7-\mathrm{dB}$ gain while consuming 4.5 mW, outperforming CMOS LNAs in W-band.
Authors
- Bruce H. Coy
- James F. Buckwalter (ORCID: https://orcid.org/0000-0002-9390-0897)
- Florian Herrault (ORCID: https://orcid.org/0000-0002-1732-9406)
- Michael D. Hodge
- Alex Dinkelacker (ORCID: https://orcid.org/0000-0001-9456-1260)
- Christopher Maxey
- Nicholas Vong
- Justin J. Kim (ORCID: https://orcid.org/0009-0007-3203-7165)
- Mark R. Soler
- Matthew H. Tom
Publication Details
- Published
- 2025-06-15
- DOI
- https://doi.org/10.1109/rfic61188.2025.11082842
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation
- University of California
- Air Force Research Laboratory