A D-Band Direct-Modulation 64-QAM Transmitter with On-Chip Digital Calibration in 16nm FinFET Technology
This paper presents a D-band direct-digital transmitter that employs RF-DACs to perform modulation in the RF domain. It achieves 64-QAM with a maximum data rate of $48 \mathrm{~Gb} / \mathrm{s}$ and an EVM of -23.8 dB. Meanwhile, a switch-based variable gain amplifier (VGA) and a digitally controlled artificial dielectric (DiCAD) are implemented on each of the I/Q paths to achieve refined on-chip amplitude and phase calibration. The transmitter is manufactured in 16 nm FinFET technology with an integrated frequency octupler and a power amplifier. The transmitter has a 3-dB bandwidth of $\mathbf{1 2 9 - 1 4 6 ~ G H z}$, a $\mathbf{P}_{\text {sat }}$ of 12.2 dBm, and a total DC power consumption of 235 mW.
Authors
- Chao-Jen Tien
- Hong-Shen Chen
- Mau-Chung Frank Chang (ORCID: https://orcid.org/0000-0002-2934-9359)
- Hsieh-Hung Hsieh
- Runzhou Chen
- Hao-Yu Chien (ORCID: https://orcid.org/0000-0002-4157-0806)
- Tzu-Jin Yeh
Institutions
- Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
Publication Details
- Published
- 2025-06-15
- DOI
- https://doi.org/10.1109/rfic61188.2025.11082836
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00