A D-Band Direct-Modulation 64-QAM Transmitter with On-Chip Digital Calibration in 16nm FinFET Technology

This paper presents a D-band direct-digital transmitter that employs RF-DACs to perform modulation in the RF domain. It achieves 64-QAM with a maximum data rate of $48 \mathrm{~Gb} / \mathrm{s}$ and an EVM of -23.8 dB. Meanwhile, a switch-based variable gain amplifier (VGA) and a digitally controlled artificial dielectric (DiCAD) are implemented on each of the I/Q paths to achieve refined on-chip amplitude and phase calibration. The transmitter is manufactured in 16 nm FinFET technology with an integrated frequency octupler and a power amplifier. The transmitter has a 3-dB bandwidth of $\mathbf{1 2 9 - 1 4 6 ~ G H z}$, a $\mathbf{P}_{\text {sat }}$ of 12.2 dBm, and a total DC power consumption of 235 mW.

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Publication Details

Published
2025-06-15
DOI
https://doi.org/10.1109/rfic61188.2025.11082836
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A D-Band Direct-Modulation 64-QAM Transmitter with On-Chip Digital Calibration in 16nm FinFET Technology

Chao-Jen Tien, Hong-Shen Chen, Mau-Chung Frank Chang, Hsieh-Hung Hsieh et al.
Radio Frequency Integrated Circuit Design
article

A D-Band Direct-Modulation 64-QAM Transmitter with On-Chip Digital Calibration in 16nm FinFET Technology

Chao-Jen Tien, Hong-Shen Chen, Mau-Chung Frank Chang, Hsieh-Hung Hsieh, Runzhou Chen, Hao-Yu Chien, Tzu-Jin Yeh
article en

Abstract

This paper presents a D-band direct-digital transmitter that employs RF-DACs to perform modulation in the RF domain. It achieves 64-QAM with a maximum data rate of $48 \mathrm{~Gb} / \mathrm{s}$ and an EVM of -23.8 dB. Meanwhile, a switch-based variable gain amplifier (VGA) and a digitally controlled artificial dielectric (DiCAD) are implemented on each of the I/Q paths to achieve refined on-chip amplitude and phase calibration. The transmitter is manufactured in 16 nm FinFET technology with an integrated frequency octupler and a power amplifier. The transmitter has a 3-dB bandwidth of $\mathbf{1 2 9 - 1 4 6 ~ G H z}$, a $\mathbf{P}_{\text {sat }}$ of 12.2 dBm, and a total DC power consumption of 235 mW.

Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
Affordable and clean energy
Openalex Percentile: Top 84%
Radio Frequency Integrated Circuit Design
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