7.8-to-10.7GHz Reliable-Mode-Switching Series Resonance Oscillator with Bidirectional Inductive-Mode-Pulling Achieving —156.5dBc/Hz Phase Noise and 199.2dBc/Hz FoM<sub>T</sub> at 10 MHz Offset in 40-nm CMOS

This paper proposes a reliable-mode-switching series resonance oscillator with bidirectional inductive-mode-pulling to achieve ultra-low phase noise and wide tuning range, simultaneously. The connection of mode switches are designed to avoid large parasitic capacitance and voltage swing. The bidirectional inductive-pulling transformer is introduced to expand the frequency range of both even and odd modes without reliability risk. Meanwhile, the balanced-slope NMOS inverter is introduced to minimize the common mode ripple and ensure the virtual ground for mode switching. Prototyped in a $40-\mathrm{nm}$ CMOS process, the measured VCO exhibits merits of 31.6% FTR from 7.8 to $10.7 \mathrm{GHz},-156.5 \mathrm{dBc} / \mathrm{Hz}$ phase noise, and $199.2 \mathrm{dBc} / \mathrm{Hz}$ $\mathrm{FoM}_{\mathrm{T}}$ at 10 MHz offset.

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Publication Details

Published
2025-06-15
DOI
https://doi.org/10.1109/rfic61188.2025.11082967
Citations
1
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.73

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article

7.8-to-10.7GHz Reliable-Mode-Switching Series Resonance Oscillator with Bidirectional Inductive-Mode-Pulling Achieving —156.5dBc/Hz Phase Noise and 199.2dBc/Hz FoMT at 10 MHz Offset in 40-nm CMOS

Yiyang Shu, Xun Luo, Qunwen Leng, Yu Wang
1 citations
Radio Frequency Integrated Circuit Design
0.73
article

7.8-to-10.7GHz Reliable-Mode-Switching Series Resonance Oscillator with Bidirectional Inductive-Mode-Pulling Achieving —156.5dBc/Hz Phase Noise and 199.2dBc/Hz FoMT at 10 MHz Offset in 40-nm CMOS

Yiyang Shu, Xun Luo, Qunwen Leng, Yu Wang
article en
1 citations

Abstract

This paper proposes a reliable-mode-switching series resonance oscillator with bidirectional inductive-mode-pulling to achieve ultra-low phase noise and wide tuning range, simultaneously. The connection of mode switches are designed to avoid large parasitic capacitance and voltage swing. The bidirectional inductive-pulling transformer is introduced to expand the frequency range of both even and odd modes without reliability risk. Meanwhile, the balanced-slope NMOS inverter is introduced to minimize the common mode ripple and ensure the virtual ground for mode switching. Prototyped in a $40-\mathrm{nm}$ CMOS process, the measured VCO exhibits merits of 31.6% FTR from 7.8 to $10.7 \mathrm{GHz},-156.5 \mathrm{dBc} / \mathrm{Hz}$ phase noise, and $199.2 \mathrm{dBc} / \mathrm{Hz}$ $\mathrm{FoM}_{\mathrm{T}}$ at 10 MHz offset.

University of Electronic Science and Technology of China (CN)
National Natural Science Foundation of China, Natural Science Foundation of Sichuan Province
Affordable and clean energy
Openalex Percentile: Top 26%
Radio Frequency Integrated Circuit Design
0.73
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7.8-to-10.7GHz Reliable-Mode-Switching Series Resonance Oscillator with Bidirectional Inductive-Mode-Pulling Achieving —156.5dBc/Hz Phase Noise and 199.2dBc/Hz FoM<sub>T</sub> at 10 MHz Offset in 40-nm CMOS — Yiyang Shu, Xun Luo, et al. · (2025) | TGRS Research Map | TGRS