A Fully Integrated 263-GHz Retro-Backscatter Circuit with 105°/82° Reading Angle and 12-dB Conversion Loss
This paper presents the first fully integrated on-chip sub-THz retro-backscatter CMOS circuit, operating at 263 GHz. Using the Van Atta reflector principle and a signal swapping and mode-conversion electromagnetic structure, the design achieves retro-directive operation with a 3-dB angle availability of $105^{\circ} / 82^{\circ}$. Fabricated in an Intel-16 CMOS process, the prototype demonstrates BPSK modulation over an input power range of -7 dBm to -13.9 dBm at 263 GHz, exhibiting a measured conversion loss of $\mathbf{1 2}$ dB and capability of Mbps-level data rate at $5-\mathrm{cm}$ reader-to-chip distance. These findings validate a low-cost, low-power, wide-angle THz retro-backscatter solution, improving the performance and practicality of ultra-miniaturized tag applications.
Authors
- Jinchen Wang (ORCID: https://orcid.org/0000-0001-5936-5512)
- Xibi Chen (ORCID: https://orcid.org/0000-0003-2615-2769)
- Jaehong Jung (ORCID: https://orcid.org/0000-0003-3690-4901)
- Anantha P. Chandrakasan (ORCID: https://orcid.org/0000-0002-5977-2748)
- Mingran Jia (ORCID: https://orcid.org/0000-0002-5352-9157)
- Ruonan Han
- Eunseok Lee (ORCID: https://orcid.org/0000-0001-5729-8256)
Institutions
- Massachusetts Institute of Technology (US)
Publication Details
- Published
- 2025-06-15
- DOI
- https://doi.org/10.1109/rfic61188.2025.11082847
- Primary Topic
- Energy Harvesting in Wireless Networks
- Type
- article
- Field-Weighted Citation Impact
- 0.00