A MEMS SPDT Switching Networks Based on High Lifetime MEMS Switch

Novel K-band MEMS SPDT (single pole double throw) switching networks are designed. The switching networks consist of two high lifetime RF MEMS SPST (single pole single throw) capacitive switches. Measured results show that the high lifetime MEMS switch whose insert loss and isolation is better 0.35 dB and 30 dB, respectively. And the hot switching frequency of MEMS switch is more than $1 \times 10^{9}$. The on/off switching time is $26 \mu \mathrm{~s} / 11 \mu \mathrm{~s}$ when the driving voltage is $21 / 0 \mathrm{~V}$, respectively. The results of the switching networks from 17.7 GHz to 21.2 GHz show that, the insert loss is less than 0.7 dB, and the isolation is better than 36 dB.