Boosting CZTS Photovoltaic Efficiency With $\text{MAPbI}_{3}$ HTL Nanomaterial

The performance of photovoltaic (PV) devices greatly depends on the selection of hole transport layer (HTL) materials, which play a vital role in promoting efficient hole extraction and curbing recombination of minority carriers. In the context of CZTS/MAPbI <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${ }_{3}$</tex> solar cells, advancements have predominantly focused on HTLs that suppress carrier recombination losses. Recent research has turned attention to HTL materials with wider bandgaps to further elevate device efficiency. This study presents an innovative approach using a wide-bandgap MAPbI <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$_{3}$</tex>-based nanostructured HTL, tailored for enhanced solar energy conversion. Comprehensive simulations were carried out to examine energy level alignment, optimize thickness and doping profiles, and engineer the cell's layered architecture. The proposed CZTS/MAPbI <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${ }_{3}$</tex> PV configuration yielded remarkable outcomes, including an open-circuit voltage of 1331 mV, short-circuit current density of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$25.97 ~\text{mA} / \text{cm}^{2}$</tex>, a fill factor of 82.26 %, an overall power conversion efficiency of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{2 8. 4 4 \%}$</tex>, and an external quantum efficiency peaking at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{9 0 \%}$</tex>.