Performance Characterizations and Usage Guidelines of Samsung CMM-H
This article presents the first publicly available study for comprehensive characterizations of an FPGA-based Samsung’s CXL Memory Module Hybrid (CMM-H) prototype. It leverages emerging CXL technology to enable high-speed and cacheline-granular communication between CPUs and NAND flash, offering three-fold benefits: byte-addressability, scalable capacity, and persistence at a low cost. Samsung’s CMM-H delivers these benefits through a hardware-only solution, i.e., it does not incur any OS/IO overheads like conventional block devices. In particular, CMM-H integrates a DRAM cache with NAND flash in a single device to deliver near-DRAM latency. Through this study, we address users’ concerns about whether a wide variety of applications can successfully run on a memory device backed by NAND flash medium. Additionally, based on these characterizations, we provide key insights into how to best take advantage of the CMM-H device.
Authors
- Marie Nguyen (ORCID: https://orcid.org/0000-0002-7226-1598)
- Rekha Pitchumani (ORCID: https://orcid.org/0009-0001-3771-5910)
- Amir Beygi
- Jianping Zeng (ORCID: https://orcid.org/0000-0003-3686-1454)
- Shuyi Pei (ORCID: https://orcid.org/0000-0002-8649-4253)
- Xuebin Yao
- Tong Zhang (ORCID: https://orcid.org/0000-0002-9614-4417)
- Da Zhang (ORCID: https://orcid.org/0000-0003-3321-1835)
- Y. Zhou (ORCID: https://orcid.org/0000-0003-4784-6794)
- Zongwang Li (ORCID: https://orcid.org/0000-0002-4356-5648)
- Changhee Jung (ORCID: https://orcid.org/0000-0002-6422-6549)
- Ramdas Kachare
- Yang Soek Ki
Institutions
- Purdue University West Lafayette (US)
- Samsung (United States) (US)
Publication Details
- Journal
- IEEE Micro
- Published
- 2025-07-24
- DOI
- https://doi.org/10.1109/mm.2025.3591577
- Citations
- 3
- Primary Topic
- Engineering Applied Research
- Type
- article
- Field-Weighted Citation Impact
- 2.86