High Time-Resolution PWM Generator for GaN Converters

High time resolution is key to get the most out of Gallium Nitride (GaN) technology in designing fast and high efficiency power converters. High resolution digital pulse-width modulation (DPWM) can be used, but it needs to be designed with a reasonable operating frequency to avoid high dynamic power dissipation. In this paper, a DPWM based on a programmable delay unit implemented in a closed loop solution is presented. The loop ensures that the elements in the delay chain have the same delay enabling PVT variation rejection and result consistency without the need for a high operating frequency. This allows tuning signals with a resolution of 195 ps and a high linearity, making the unit compatible with the requirements for driving GaN power devices. The system has been implemented in a test chip using 100 V 0.13 μm BCD technology at 40 MHz operating frequency and validated with a custom debug board that confirms the expected resolution over a wide tuning range

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Publication Details

Journal
IEEE Transactions on Circuits & Systems II Express Briefs
Published
2025-07-24
DOI
https://doi.org/10.1109/tcsii.2025.3592349
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

High Time-Resolution PWM Generator for GaN Converters

Roberto Bardelli, Andrea Gambero, Francesco D’Angelo, S. Passi et al.
IEEE Transactions on Circuits & Systems II Express Briefs
GaN-based semiconductor devices and materials
article

High Time-Resolution PWM Generator for GaN Converters

Roberto Bardelli, Andrea Gambero, Francesco D’Angelo, S. Passi, Michelangelo Orabona
article en

Abstract

High time resolution is key to get the most out of Gallium Nitride (GaN) technology in designing fast and high efficiency power converters. High resolution digital pulse-width modulation (DPWM) can be used, but it needs to be designed with a reasonable operating frequency to avoid high dynamic power dissipation. In this paper, a DPWM based on a programmable delay unit implemented in a closed loop solution is presented. The loop ensures that the elements in the delay chain have the same delay enabling PVT variation rejection and result consistency without the need for a high operating frequency. This allows tuning signals with a resolution of 195 ps and a high linearity, making the unit compatible with the requirements for driving GaN power devices. The system has been implemented in a test chip using 100 V 0.13 μm BCD technology at 40 MHz operating frequency and validated with a custom debug board that confirms the expected resolution over a wide tuning range

IEEE Transactions on Circuits & Systems II Express BriefsVol. 72(12)
STMicroelectronics (Italy) (IT)
Affordable and clean energy
Openalex Percentile: Top 89%
GaN-based semiconductor devices and materials
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High Time-Resolution PWM Generator for GaN Converters — Roberto Bardelli, Andrea Gambero, et al. · IEEE Transactions on Circuits & Systems II Express Briefs (2025) | TGRS Research Map | TGRS