Design of Ultrawideband Energy-Selective Surface Based on Triple-Layer Structure and Semiconductor for HIRF Prevention

An ultrawideband energy selective surface (ESS) for adaptive prevention of high-intensity radiation fields (HIRF) is proposed in this paper. With a triple-layer structure loaded with PIN diodes, the ultrawideband transmission property from C- to X-band was achieved in both the OFF- and ON-state of the diode. Without active biasing, the state of the loaded diodes was directly controlled by the intensity of the incident waves. Unlike the low insertion loss (IL) realized in OFF-state, the shielding effectiveness (SE) in ON-state was high to prevent the incident waves. Therefore, the proposed ESS could adaptively respond to the HIRF’s illumination and simultaneously switch its transmission property. After full-wave simulations and waveguide measurements, the bandwidth of IL below 1 dB and SE over 20 dB were achieved from 6.30 GHz to 12.20 GHz, demonstrating a 64% fractional bandwidth for HIRF prevention.