Self-powered vacuum ultraviolet photodetector based on a BAlN/Si/BAlN double heterojunction
Hexagonal boron nitride (hBN) and Al-doped BxAl1-xN films were grown on Si(100) substrates by means of a radio frequency magnetron sputtering technique. These films have been fabricated into hBN/Si and BAlN/Si heterojunctions, respectively. The heterojunction of hBN/Si exhibited an excellent response to vacuum ultraviolet (VUV) light at 185 nm. By incorporating Al into hBN, the BAlN/Si heterostructure demonstrated a response performance and weak self-powered characteristics. In order to further improve the self-powering performance, a BAlN/Si/BAlN double-heterojunction has been designed and then prepared, leading to high-sensitivity detection with a light-to-dark current ratio of 3600 and a responsivity of 70 mA/W at 185 nm under zero bias.
Authors
- Tao Wang (ORCID: https://orcid.org/0000-0001-7595-6574)
- Ziyan Lin (ORCID: https://orcid.org/0000-0002-2458-7016)
- Wannian Fang
- You-Wei Chen (ORCID: https://orcid.org/0000-0001-9372-4320)
- Feng Yun (ORCID: https://orcid.org/0000-0001-9854-3406)
- Ransheng Chen (ORCID: https://orcid.org/0000-0003-1901-8801)
- Qiang Li (ORCID: https://orcid.org/0000-0003-1056-4152)
- Kangkang Liu (ORCID: https://orcid.org/0000-0002-5091-157X)
- Haifeng Liu (ORCID: https://orcid.org/0009-0001-0796-1037)
- Zhihao Zhang (ORCID: https://orcid.org/0009-0001-9747-0310)
Institutions
- Ministry of Education (TW)
- Advanced Materials and Devices (United States) (US)
- Ministry of Education (BD)
- Cardiff University (GB)
- Xi'an Jiaotong University (CN)
Publication Details
- Journal
- Optics Letters
- Published
- 2025-07-24
- DOI
- https://doi.org/10.1364/ol.568977
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- Fundamental Research Funds for the Central Universities