Impact of Ce doping on the optoelectronic and structural properties of a CsPbIBr₂ perovskite solar cell

This paper provides a detailed analysis of pure CsPbIBr₂ and 4% Ce-doped CsPbIBr₂ perovskite films, with an emphasis on their structural, optical, and photovoltaic properties. X-ray diffraction analysis confirms a predominant cubic perovskite phase in both samples, with Ce doping leading to increased crystal size (21 nm to 32 nm). UV-Vis spectroscopy reveals reduced bandgap energy (2.2 eV to 2.1 eV) with Ce doping. Dielectric constant analysis indicates enhanced permittivity in the Ce-doped samples, which is crucial for solar-cell light trapping. Energy band structure analysis demonstrates improved photovoltaic cell performance with Ce doping, yielding higher open-circuit voltage, short-circuit current, and efficiency (9.71%) compared to pure CsPbIBr₂ (8.02%). Ce doping mitigates electron-hole recombination, enhancing the cell stability, electron affinity, and power output. This research underscores the potential for cost-effective, efficient, and stable CsPbIBr₂ perovskite solar cells.