Design and Simulation of a Carry Save Adder (CSA) using NAND Gate in CMOS 180nm Technology

Using CMOS 180nm technology, this study explores the design and simulation of digital circuits which include basic logic gates to Carry Save Adder (CSA). With a focus on optimizing power consumption and propagation delay, the designs are implemented in LTspice.

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Publication Details

Published
2025-04-24
DOI
https://doi.org/10.1109/amathe65477.2025.11080777
Citations
1
Primary Topic
Radiation Effects in Electronics
Type
article
Field-Weighted Citation Impact
0.73
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article

Design and Simulation of a Carry Save Adder (CSA) using NAND Gate in CMOS 180nm Technology

Sreenidhi Prabha Rajeev, Gautham Jayesh
1 citations
Radiation Effects in Electronics
0.73
article

Design and Simulation of a Carry Save Adder (CSA) using NAND Gate in CMOS 180nm Technology

Sreenidhi Prabha Rajeev, Gautham Jayesh
article en
1 citations

Abstract

Using CMOS 180nm technology, this study explores the design and simulation of digital circuits which include basic logic gates to Carry Save Adder (CSA). With a focus on optimizing power consumption and propagation delay, the designs are implemented in LTspice.

Amrita Vishwa Vidyapeetham (IN)
Affordable and clean energy
Openalex Percentile: Top 26%
Radiation Effects in Electronics
0.73
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Design and Simulation of a Carry Save Adder (CSA) using NAND Gate in CMOS 180nm Technology — Sreenidhi Prabha Rajeev, Gautham Jayesh · (2025) | TGRS Research Map | TGRS