Performance analysis of gate metal impact on InAlN/GaN/AlGaN HEMT for High-Speed RF applications

This work presents the design and analysis of a high-performance heterostructure device based on InAIN/GaN/AlGaN/GaN/ $\boldsymbol{\beta}$ - $\mathbf{G a 2 O}_{\mathbf{2}}$, aimed at addressing the demands of next-generation power electronics and radio frequency (RF) applications. The heterostructure combines the high electron mobility and excellent polarization properties of GaN with the superior thermal and electrical characteristics of the ultra-wide bandgap (UWBG) β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> substrate. The integration of an InAIN barrier layer enhances two-dimensional electron gas (2DEG) formation and mobility, while the AlGaN intermediate layer provides improved electron confinement and leakage suppression. The proposed device with platinum (Pt) metal contact exhibited the maximum drain current of $2.1 \mathrm{~A} / \mathrm{mm}$, transconductance of $566 \mathrm{mS} / \mathrm{mm}$ and cut-off frequency of 380 GHz compared to other metal contacts aluminum (Al) and Gold (Au). This results of InAIN/GaN/AlGaN HEMT research pave the way for the next generation of RF electronics, driving advancements in high-performance technologies.