Reliable Characterization of SK-1300, MgF2, ZnSe, and Si Substrates in 0.2-4.2 μm Spectral Range

Reliable substrate characterization approach is proposed. Four widely used substrates SK-1300, MgF2, ZnSe, and Si were characterized in a broadband spectral range from 250-4200 nm based on multi-angle measurements. Refractive index accuracy was estimated.

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Published
2025-01-01
DOI
https://doi.org/10.1364/oic.2025.the.10
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Reliable Characterization of SK-1300, MgF2, ZnSe, and Si Substrates in 0.2-4.2 μm Spectral Range

V. Matusevich, Michael K. Trubetskov, Tatiana Amochkina, Jordi Sancho‐Parramon
3 links
GaN-based semiconductor devices and materials
article

Reliable Characterization of SK-1300, MgF2, ZnSe, and Si Substrates in 0.2-4.2 μm Spectral Range

V. Matusevich, Michael K. Trubetskov, Tatiana Amochkina, Jordi Sancho‐Parramon
article en

Abstract

Reliable substrate characterization approach is proposed. Four widely used substrates SK-1300, MgF2, ZnSe, and Si were characterized in a broadband spectral range from 250-4200 nm based on multi-angle measurements. Refractive index accuracy was estimated.

Max Planck Institute of Quantum Optics (DE), Ruđer Bošković Institute (HR), Max Planck Computing and Data Facility (DE), Daimler (Germany) (DE)
Openalex Percentile: Top 89%
GaN-based semiconductor devices and materials
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