Optical and Durability Properties of Microwave Plasma Assisted Sputter Deposited Stoichiometric Silicon Nitride

A study of the optical and mechanical properties of stoichiometric Silicon Nitride deposited using microwave plasma assisted sputtering. A coating stress of -317MPa, hardness of 1.3GPa was obtained with a transmittance range of 300nm-5μm.

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Published
2025-01-01
DOI
https://doi.org/10.1364/oic.2025.tb.8
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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Optical and Durability Properties of Microwave Plasma Assisted Sputter Deposited Stoichiometric Silicon Nitride

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Optical and Durability Properties of Microwave Plasma Assisted Sputter Deposited Stoichiometric Silicon Nitride

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article en

Abstract

A study of the optical and mechanical properties of stoichiometric Silicon Nitride deposited using microwave plasma assisted sputtering. A coating stress of -317MPa, hardness of 1.3GPa was obtained with a transmittance range of 300nm-5μm.

University of Strathclyde (GB), University of Glasgow (GB), University of the West of Scotland (GB)
University of Glasgow, University of the West of Scotland, Science and Technology Facilities Council
Openalex Percentile: Top 89%
GaN-based semiconductor devices and materials
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