Reduction of the absorption coefficient in hydrogenated amorphous silicon for gravitational wave interferometric mirrors
The absorption coefficient of vapor-deposited amorphous silicon is reduced orders of magnitude at near-infrared wavelengths when hydrogenated despite low H incorporation. Raman and ESR measurements suggest H catalyzes structural relaxation of weak Si–Si bonds.
Authors
- A.S. Markosyan (ORCID: https://orcid.org/0000-0002-1510-3075)
- Aaron Davenport
- Carmen S. Menoni (ORCID: https://orcid.org/0000-0001-9185-2572)
- R. Zhou (ORCID: https://orcid.org/0000-0003-1320-1453)
- M. Molina-Ruiz (ORCID: https://orcid.org/0000-0003-4892-3042)
- F. Hellman (ORCID: https://orcid.org/0000-0002-9135-6330)
- M. M. Fejer (ORCID: https://orcid.org/0000-0002-5512-1905)
Institutions
- Colorado State University (US)
- University of California, Berkeley (US)
- Stanford University (US)
Publication Details
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1364/oic.2025.fa.3
- Primary Topic
- Geophysics and Sensor Technology
- Type
- article
- Field-Weighted Citation Impact
- 0.00