Laser Resistance of Low-Density SiO2 Optical Thin Films by Sputtering and Electron Beam Deposition

This study evaluates the 355 nm laser damage threshold of single-layer SiO 2 films with varying refractive indices, fabricated via simultaneous electron beam evaporation and direct current pulse sputtering deposition.

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Publication Details

Published
2025-01-01
DOI
https://doi.org/10.1364/oic.2025.me.8
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
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article

Laser Resistance of Low-Density SiO2 Optical Thin Films by Sputtering and Electron Beam Deposition

Hiroshi Murotani, Taisei Wakamiya, Naoya Tajima, Takayuki Matsudaira et al.
Semiconductor materials and devices
article

Laser Resistance of Low-Density SiO2 Optical Thin Films by Sputtering and Electron Beam Deposition

Hiroshi Murotani, Taisei Wakamiya, Naoya Tajima, Takayuki Matsudaira, Yuhang Yang
article en

Abstract

This study evaluates the 355 nm laser damage threshold of single-layer SiO 2 films with varying refractive indices, fabricated via simultaneous electron beam evaporation and direct current pulse sputtering deposition.

Tokai University (JP), Japan Steel Works (Japan) (JP), Mirai Hospital (JP)
Openalex Percentile: Top 84%
Semiconductor materials and devices
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