Gasochromic Properties of Tungsten Oxide Thin Films Prepared by Glancing Angle Deposition with Electron Beam Evaporation

This work presents gasochromic properties of WO 3 thin films deposited by GLAD technique using EBE and shows the influence of the deposition angle on the change of transmission coefficient upon exposure to hydrogen.

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Published
2025-01-01
DOI
https://doi.org/10.1364/oic.2025.fb.5
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00
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article

Gasochromic Properties of Tungsten Oxide Thin Films Prepared by Glancing Angle Deposition with Electron Beam Evaporation

J. Domaradzki, Des Gibson, M. Mazur, Wiktoria Weichbrodt
Semiconductor materials and devices
article

Gasochromic Properties of Tungsten Oxide Thin Films Prepared by Glancing Angle Deposition with Electron Beam Evaporation

J. Domaradzki, Des Gibson, M. Mazur, Wiktoria Weichbrodt
article en

Abstract

This work presents gasochromic properties of WO 3 thin films deposited by GLAD technique using EBE and shows the influence of the deposition angle on the change of transmission coefficient upon exposure to hydrogen.

Wrocław University of Science and Technology (PL), AGH University of Krakow (PL), University of the West of Scotland (GB)
Openalex Percentile: Top 84%
Semiconductor materials and devices
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